Metal treatment – Compositions – Heat treating
Patent
1983-03-09
1984-06-26
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 29576T, 148187, 357 235, 427 531, H01L 21263, B23K 2700
Patent
active
044564902
ABSTRACT:
A process for fabricating metal-insultor-semiconductor integrated circuits, especially the processing step of annealing a fabricated wafer by passing a laser beam through the semiconductor wafer from the back surface thereof to the semiconductor-insulator interface to effect localized heating of the insulator at the semiconductor-insulator interface, is disclosed. More particularly, the laser beam is of a wavelength which makes the semiconductor wafer substantially transparent and the insulator substantially absorbent to the laser beam. Moreover, since the illuminating area of the laser beam may be substantially smaller than the surface area of the semiconductor-insulator interface, the laser beam may be scanned across the surface area of the interface to effect an overall annealing thereof.
REFERENCES:
patent: 4116721 (1978-09-01), Ning et al.
patent: 4319119 (1982-03-01), Runge
Celler et al., J. Appl. Phys. 50 (Nov. 1979) 7264.
Iwamatsu et al., J. Electrochem. Soc. 128 (1981) 384.
Lysenko et al., Phys. Stat. Solidi. 49a (1978) 405.
Kamins et al., Solid St. Electronics, 23 (1980) 1037.
Dutta Subhadra
Raichoudhury Prosenjit
Roy Upendra
Westinghouse Electric Corp.
Zitelli W. E.
LandOfFree
Laser annealing of MIS devices by back surface laser treatment does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Laser annealing of MIS devices by back surface laser treatment, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser annealing of MIS devices by back surface laser treatment will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2231187