Laser annealing method for a semiconductor thin film

Details Laser annealing method for a semiconductor thin film Laser annealing method for a semiconductor thin film

Filed on

1995-03-13

Date issued

1997-01-07

Examiner

Bowers, Jr., Charles L.

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437907, 437967, 117 8, 117 10, 117904, 117 44, 148DIG90, 148DIG93, 148DIG122, H01L 21268

Type

Patent

Status

active

Patent number

055916686

Description

ABSTRACT:
A laser annealing method for a semiconductor thin film for irradiating the semiconductor thin film with a laser beam having a section whose outline includes a straight-line portion, so as to change the crystallinity of the semiconductor thin film is provided, wherein the semiconductor thin film is overlap-irradiated with the laser beam while the laser beam is shifted in a direction different from a direction along the straight-line portion. A thin film semiconductor device fabricated by use of the laser annealing method is also provided.

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patent: 5264383 (1993-11-01), Young
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P. Zorabedian, et al., J. Appl. Phys., 57(12)(1985) 5262 "Laser Scan registration For lateral Epitaxy of SOI Stripes . . . ".
T. J. Stutz, et al., Appl. Phys. Lett. 39(1981) 498 ". . . Beam Shaping to Achieve Large-grain CW laser . . . Polysilicon . . . ".

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