Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-01-18
2011-01-18
Berman, Jack I (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492220, C438S106000, C438S308000, C438S378000, C438S487000, C219S121750
Reexamination Certificate
active
07872246
ABSTRACT:
When the second harmonic of a YAG laser is irradiated onto semiconductor films, concentric-circle patterns are observed on some of the semiconductor films. This phenomenon is due to the non-uniformity of the properties of the semiconductor films. If such semiconductor films are used to fabricate TFTs, the electrical characteristics of the TFTs will be adversely influenced. A concentric-circle pattern is formed by the interference between a reflected beam1reflected at a surface of a semiconductor film and a reflected beam2reflected at the back surface of a substrate. If the reflected beam1and the reflected beam2do not overlap each other, such interference does not occur. For this reason, a laser beam is obliquely irradiated onto the semiconductor film to solve the interference. The properties of a crystalline silicon film formed by this method are uniform, and TFTs which are fabricated by using such crystalline silicon film have good electrical characteristics.
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Berman Jack I
Maskell Michael
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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