Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Reexamination Certificate
2007-03-20
2007-03-20
Gupta, Yogendra (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step acting on the...
C117S003000, C117S004000, C117S044000, C117S047000
Reexamination Certificate
active
10124826
ABSTRACT:
A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a first wavelength; supplying a mask with a first mask section having apertures with a first dimension and a second mask section with apertures having a second dimension, less than the first dimension; applying a laser beam having a first energy density to a substrate region; melting a substrate region in response to the first energy density; crystallizing the substrate region; applying a diffracted laser beam to the substrate region; and, in response to the diffracted laser beam, smoothing the substrate region surface. In some aspects of the method, applying a diffracted laser beam to the substrate area includes applying a diffracted laser beam having a second energy density, less than the first energy density, to the substrate region. The second energy density is in the range of 40% to 70% of the first energy density, and preferably in the range of 50% to 60% of the first energy density.
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Crowder Mark A.
Mitani Yasuhiro
Voutsas Apostolos T.
Gupta Yogendra
Rao G. Nagesh
Ripma David C.
Sharp Laboratories of America Inc.
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