Electric heating – Metal heating – By arc
Reexamination Certificate
2011-01-04
2011-01-04
Elve, M. Alexandra (Department: 3742)
Electric heating
Metal heating
By arc
C219S121780, C219S121800
Reexamination Certificate
active
07863541
ABSTRACT:
This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the generation of a concentric pattern and to provide a semiconductor device manufacturing method including a step using the laser annealing method. While moving a substrate at a constant rate between 20 and 200 cm/s, a laser beam is radiated aslant to a semiconductor film on a surface of the semiconductor substrate. Therefore, it is possible to radiate a uniform laser beam to even a semiconductor film on a large-sized substrate and to thereby manufacture a semiconductor device for which the generation of a concentric pattern is prevented or decreased. By condensing a plurality of laser beams into one flux, it is possible to prevent or decrease the generation of a concentric pattern and to thereby improve the reliability of the semiconductor device.
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Office Action (Application No. 200610115609.9; CN5901D1) Dated Apr. 3, 2009.
Hiroki Masaaki
Tanaka Koichiro
Yamazaki Shunpei
Costellia Jeffrey L.
Elve M. Alexandra
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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