Laser annealing apparatus

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C117S202000, C117S204000, C117S205000, C117S904000

Reexamination Certificate

active

07097709

ABSTRACT:
A laser annealing apparatus for crystallizing a semiconductor film with a linearly radiating laser beam including a laser oscillator and laser optical systems for forming a laser beam radiated from the laser oscillator linearly, for application to a semiconductor film. Each linearly radiating laser beam from each laser optical system radiated onto the semiconductor film is arrayed almost linearly in a length direction, with an interval on the semiconductor film.

REFERENCES:
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 6014401 (2000-01-01), Godard et al.
patent: 6326219 (2001-12-01), Markle et al.
patent: 6437284 (2002-08-01), Okamoto et al.
patent: 6566683 (2003-05-01), Ogawa et al.
patent: 6717105 (2004-04-01), Okamoto et al.
patent: 1 256 977 (2002-11-01), None
patent: 04-282869 (1992-10-01), None
patent: 11-186163 (1999-07-01), None
patent: 2000-012484 (2000-01-01), None
patent: WO 02/31871 (2002-04-01), None
U.S. Appl. No. 09/708,608, filed Mar. 8, 2000, Mitsubishi Electric.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Laser annealing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser annealing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser annealing apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3607522

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.