Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Reexamination Certificate
2006-08-29
2006-08-29
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
C117S202000, C117S204000, C117S205000, C117S904000
Reexamination Certificate
active
07097709
ABSTRACT:
A laser annealing apparatus for crystallizing a semiconductor film with a linearly radiating laser beam including a laser oscillator and laser optical systems for forming a laser beam radiated from the laser oscillator linearly, for application to a semiconductor film. Each linearly radiating laser beam from each laser optical system radiated onto the semiconductor film is arrayed almost linearly in a length direction, with an interval on the semiconductor film.
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U.S. Appl. No. 09/708,608, filed Mar. 8, 2000, Mitsubishi Electric.
Nishimae Jun-ichi
Ogawa Tetsuya
Okamoto Tatsuki
Sato Yukio
Kunemund Robert
Leydig , Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
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