Laser annealer and laser thin-film forming apparatus

Details Laser annealer and laser thin-film forming apparatus Laser annealer and laser thin-film forming apparatus

2006-09-26

2006-09-26

Johnson, Jonathan (Department: 1725)

Electric heating

Metal heating

By arc

C372S006000

Reexamination Certificate

active

07112760

ABSTRACT:
A laser annealer has a laser light source with at least one GaN-type semiconductor laser and is configured so as to form emission points that emit laser beams having a wavelength of 350 to 450 nm, and a scanning device for scanning an annealing surface with the laser beams. The laser annealer may have a spatial light modulator for modulating the laser beams, and in which pixel portions whose light modulating states change in accordance with control signals are arranged on a substrate. The invention is applied to a laser thin-film forming apparatus. The apparatus has a laser source that has at least one semiconductor laser and is configured so as to form emission points, and an optical system for focusing laser beams into a single beam in the width direction of a substrate.

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Akito Hara, etA al.,/ Selective Single-Crystalline-Silicon Growth at the Pre-Defined Active Regions ofTFT's on a Glass by a Scanning DPSS CW Laser Irradiation./(Technical Report of IEICE) ED Oct. 2001 pp. 21-27.
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