Laser annealed double conductor structure

Details Laser annealed double conductor structure Laser annealed double conductor structure

1979-07-24

1981-12-15

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

219121LM, 427 38, 427 531, 427 86, 427 89, 427 90, 427 93, 427 94, 427 96, H01L 2131, H01L 21316, H01L 21268

Patent

active

043059732

ABSTRACT:
In double conductor micro-electronic structures, prior to the low temperature deposition or growth of an insulating layer over a polycrystalline or amorphous surface, the surface is annealed using a beam of radiant energy, which causes it to become very smooth, thereby removing any surface spikes. The insulating layer placed thereover has remarkably improved insulation qualities heretofore unattainable at low temperatures. The beam of radiant energy is preferably applied in bursts of energy lasting for a sufficiently short duration so that implanted impurities in the silicon substrate do not redistribute.

REFERENCES:
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patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4187126 (1980-02-01), Radd
patent: 4198246 (1980-04-01), Wu
patent: 4214918 (1980-07-01), Gat
Pliskin, "Comparison of Properties of Dielectric Films . . . ", Journal of Vacuum Science Technology, vol. 14, No. 5, Sep. 10, 1977, pp. 1064-1081.
Mukai et al. "Planar Multilevel Interconnection Technology Employing a Polyimide", IEEE Journal of Solid State Circuits, vol. SC-13, No. 4, Aug. 1978, pp. 462-467.
Wu et al. "Laser Annealing of Ion Implanted Polycrystalline Silicon Films", Symposium H, Materials Research Society Annual Meeting, Boston, Mass., 12-1978.
Chatterjee et al., "A Survey . . . ", IEEE Trans. on Electron Devices, vol. Ed.-26, No. 6, Jun. 1979.
Ohzone et al., "A 2KX8 Bit Static Ram", IEDM Technical Digest, Int. Electron Device Meeting, Dec. 1978, pp. 360-363.
Crowder, "1 .mu.m MOSFET . . . ", IEEE Trans. on Electron Devices, vol. Ed.-26, No. 4, Apr. 1979, pp. 369-371.
Shah, "Refractory Metal Gate Processes . . . ", IEEE Trans on Electron Devices, vol. Ed.-26, No. 4, Apr. 1979, pp. 631-640.

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