Laser anneal method for a semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

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257 72, 257 75, 438149, 438308, 438486, 438487, 438795, H01L 21263

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active

060721944

ABSTRACT:
Laser anneal processing of a semiconductor layer is repeated in a number of steps. Grain size is increased using high energy ELA for a first step, and grain sizes are uniformed using ELA with low energy for a later step. As a defective crystallization region occurs in an excessive energy region during the ELA for the first step, in the ELA for the second time, excessive energy is removed and the defective crystallization region is eliminated by reducing the energy to an optimal value, thereby improving the crystallinity of a p-Si layer.

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List of presentations at Forum '96, including "Excimer Laser Annealing system SLA 3600," Apr. 19, No. 18.
M. Kamiya, K. Ando, K. Kim, "Excimer Annealing SLA3600" paper, no date.

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