Laser and thermal assisted chemical vapor deposition of mercury

Details Laser and thermal assisted chemical vapor deposition of mercury Laser and thermal assisted chemical vapor deposition of mercury

1989-06-30

1990-06-12

Childs, Sadie

Coating processes

Electrical product produced

Welding electrode

427 50, 427 76, 4271261, 427252, 427255, 4272552, B05D 306, C23C 1630

Patent

active

049332074

ABSTRACT:
A mercury compound such as mercury telluride or mercury cadmium telluride is deposited upon a substrate by chemical vapor deposition, with dissociation of the organic compounds accelerated by laser energy. The mercury-containing compound is preferably divinylmercury, which dissociates under intense light of 248 nanometers wavelength to deposit mercury in combination with the codeposited element. The laser-assisted chemical vapor deposition is accomplished at 100.degree. C. to 195.degree. C., preferably 165.degree. C., without the deposition of carbon contaminants.

REFERENCES:
patent: 3218203 (1965-11-01), Ruehrwein
patent: 3218204 (1965-11-01), Ruehrwein
patent: 4352834 (1982-10-01), Taketoshi et al.
patent: 4418096 (1983-11-01), Gauthier et al.
patent: 4435224 (1984-03-01), Durand
patent: 4436580 (1984-03-01), Boyd et al.
patent: 4447470 (1984-05-01), Kay
patent: 4523051 (1985-06-01), Mickelsen et al.
patent: 4650539 (1987-03-01), Irvine et al.
patent: 4655848 (1987-04-01), Kay et al.
patent: 4701997 (1987-10-01), Kita et al.
patent: 4740386 (1988-04-01), Cheung
S. Irvine et al, "Photo-Metal Organic Vapor Phase Epitaxy: A Low Temperature Method for the Growth of Cd.sub.x Hg.sub.1-x Te," J. Vac. Sci. Tech. B 3 (5), Sep./Oct. 1985, pp. 1450-1455.
W. Hoke et al, "Low-Temperature Metalorganic Growth of CdTe and HgTe Films Using Ditertiarybutyltelluride", Appl. Phys. Lett. 48 (24), 6/16/86.
W. Hoke et al, "Metalorganic Growth of CdTe and HgCdTe Epitaxial Films at a Reduced Substrate Temperature using Diisopropyltelluride," Appl. Phys. Lett. 46 (4), 2/15/85, pp. 398-400.
B. J. Morris, Appl. Phys. Lett., 48(13), 3/31/86, "Photochemical Organometallic Vapor Phase Epitaxy of Mercury Cadmium Telluride," pp. 867-869.
Ext. Absts. of the 17th Conf. on Solid State Devices & Materials, Tokyo, 1985, pp. 159-163, S. Irvine et al, "Photo-Epitaxial Growth of HgTe and Related Materials".
Irvine et al, "Photochemical Processes in Photo-Assisted Epitaxy of Cd.sub.x Hg.sub.1-x Te", MRS Symp. R. Boston, 1986.
C. Wang et al, "Epitaxial Growth of HgTe by Precracking Metalorganic Mercury and Tellurium Compounds," Appl. Phys. Lett. 48 (16), Apr. 21, 1986, pp. 1085-1086.

Affiliated with

Also associated with

Rating

Laser and thermal assisted chemical vapor deposition of mercury does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser and thermal assisted chemical vapor deposition of mercury , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser and thermal assisted chemical vapor deposition of mercury will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-616367