Laser ablation to selectively thin wafers/die to lower...

Details Laser ablation to selectively thin wafers/die to lower... Laser ablation to selectively thin wafers/die to lower...

2006-12-11

2010-12-14

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S666000, C438S668000, C438S977000, C216S094000

Reexamination Certificate

active

07851361

ABSTRACT:
A laser ablated wafer for a semiconductor device, such as a MOSFET or other power device, and a method of producing such a wafer to achieve a lower electrical resistance are provided. The method includes forming first holes, slots or trenches on a first surface of the wafer and focusing a laser beam to form second trenches on a bottom surface of the wafer, and filling the trenches, for example using aluminum or other metallic filling, to provide conductive electrodes or conductive surfaces for the semiconductor device. In such a wafer each trench on the second surface may be deeper, for example more than one hundred microns deep and tens of microns wide.

REFERENCES:
patent: 6574863 (2003-06-01), Tung et al.
patent: 7485910 (2009-02-01), Kim et al.
patent: 2002/0086137 (2002-07-01), Brouillette et al.
patent: 2003/0037815 (2003-02-01), Kim et al.

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