Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-08-12
1993-11-23
King, Roy
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505730, 505732, 427 62, 427596, 4271263, B05D 306, B05D 512
Patent
active
052644120
ABSTRACT:
A method is provided for forming a thin film of an oxide superconductor on a substrate by laser ablation. Energy distribution in the section of a laser beam is homogenized within 10%. The homogenized laser beam is applied onto a target. A thin high-quality film of material ablated from the target is thus formed on a substrate which is arranged to face the target.
REFERENCES:
Kwok et al, "Laser evaporation deposition of superconducting and dielectric thin films", Appl. Phys. Lett. 52(21) May 1988, pp. 1825-1827.
Roas et al, "Epitaxial growth of YBa.sub.2 Cu.sub.3 O.sub.7-x thin films by a laser evaporation process", Appl. Phys. Lett. 53(16) Oct. 1988, pp. 1557-1559.
Applied Physics Letters, Feb. 5, 1990, vol. 56, No. 6, "Effects of Beam Parameters on Excimer Laser Deposition of YBa.sub.2 Cu.sub.3 O.sub.7-8 ", Muenchausen, et al., pp. 578-580.
Fujimori Naoji
Nagaishi Tatsuoki
Ota Nobuhiro
King Roy
Sumitomo Electric Industries Ltd.
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