Laser ablation method for fabricating high performance...

Details Laser ablation method for fabricating high performance... Laser ablation method for fabricating high performance...

2007-02-13

2007-02-13

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Having organic semiconductive component

C257SE21033

Reexamination Certificate

active

11204724

ABSTRACT:
A laser ablation method is utilized to define the channel length of an organic transistor. A substrate is coated with a deposition of a metal or conductive polymer deposition, applied in a thin layer in order to enhance the resolution that can be attained by laser ablation. The laser ablation method can be used in a roll-to-roll process, and achieves speeds, volumes, prices and resolutions that are adequate to produce printed electronic technologies.

REFERENCES:
patent: 6602790 (2003-08-01), Kian et al.
patent: 6737338 (2004-05-01), Takeda
patent: 6762124 (2004-07-01), Kian et al.
patent: 2003/0178620 (2003-09-01), Bernds et al.
patent: 2004/0266054 (2004-12-01), Brazis et al.
patent: 2006/0138423 (2006-06-01), Hirai
James R. Sheats, “Manufacturing and Commercialization Issues In Organic Electronics”, Journal of Materials Resarch, Materials Research Society, vol. 19, No. 7, pp. 1974-1989.

Affiliated with

Also associated with

Rating

Laser ablation method for fabricating high performance... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser ablation method for fabricating high performance..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser ablation method for fabricating high performance... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3849114