Laser ablation damascene process

Details Laser ablation damascene process Laser ablation damascene process

1991-02-01

1992-03-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437203, 437228, 148DIG93, 156643, 156664, 156666, 427 531, H01L 2188

Patent

active

050932799

ABSTRACT:
A laser ablation damascene process for the planarizing of metal/polymer structures. More specifically, the process is especially adapted for the fabrication of both interlevel via metallization and circuitization layers in integrated circuit (IC) interconnects. Subsequent to the forming or etching of holes or depressions in a polymer insulating layer, a metal layer or film is deposited thereon for the purpose of fabricating vias or trenches for metallization and circulation layers in IC connects. Thereafter, the surface of the metal layer which has been deposited or superimposed on the polymer substrate through any suitable method known in the art is irradiated with at least one laser pulse which will cause the metal layer to melt and reflow and resultingly fill the vias and trenches etched in the polymer substrate while simultaneously ablating and removing the metal from the planarized surface of the substrate in the regions about the vias and trenches.

REFERENCES:
patent: 4674176 (1987-06-01), Tuckerman
patent: 4684437 (1987-08-01), Donelon et al.
patent: 4758533 (1988-07-01), Magee et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4920070 (1990-04-01), Mukai
patent: 4998239 (1991-03-01), Strandjord et al.
patent: 5024968 (1991-06-01), Engelsberg
patent: 5032233 (1991-07-01), Yu et al.

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