Large value capacitor

Details Large value capacitor Large value capacitor

1973-10-25

1976-06-08

Larkins, William D.

357 51, 357 55, 357 60, H01L 2993

Patent

active

039627136

ABSTRACT:
Disclosed is a semiconductor capacitor which utilizes the volume of the semiconductor substrate in which it is formed to create increased surface area and thereby to provide increased capacitance. The surface area is increased by forming selectively spaced grooves in the surface of the semiconductor substrate and utilizing the sidewalls of the grooves as surface. A thin layer of dielectric is formed over the increased surface area, and thereafter a metal layer is formed over the dielectric layer to provide a dielectric capacitor. An active junction P-N capacitor may be formed instead of a dielectric capacitor by forming a P-N junction comprising the increased surface area, and thereover forming the metallized contact.

REFERENCES:
patent: 2841508 (1958-07-01), Roup et al.
patent: 3278337 (1966-10-01), Gault
patent: 3506888 (1970-04-01), Siebertz et al.
patent: 3579057 (1971-05-01), Stoller
patent: 3586929 (1971-06-01), Burmeister et al.
patent: 3611062 (1971-10-01), Rideout

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