Large-tilted-angle nitrogen implant into dielectric regions over

Details Large-tilted-angle nitrogen implant into dielectric regions over Large-tilted-angle nitrogen implant into dielectric regions over

1995-06-12

1996-05-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 35, 437 29, H01L 21265

Patent

active

055167071

ABSTRACT:
A transistor is formed which has improved hot carrier immunity. On a substrate, between two source/drain regions, a gate region is formed over a dielectric region. An implant is used to dope the source/drain regions. After doping the source/drain regions, a tilted angle nitrogen implant is performed to implant nitrogen into areas of the dielectric region overlaying the drain/source regions of the transistor. The tilted angle nitrogen implant may be performed before or after forming spacer regions on sides of the gate region.

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