Large tilt angle boron implant methodology for reducing subthres

Details Large tilt angle boron implant methodology for reducing subthres Large tilt angle boron implant methodology for reducing subthres

1995-03-08

1997-01-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 44, H01L 21265

Patent

active

055939074

ABSTRACT:
A semiconductor structure with large tile angle boron implant is provided for reducing threshold shifts or rolloff at the channel edges. By minimizing threshold shifts, short channel effects and subthreshold currents at or near the substrate surface are lessened. The semiconductor structure is prepared by implanting boron at a non-perpendicular into the juncture between the channel and the source/drain as well as the juncture between the field areas and the source/drain. Placement of boron into these critical regions replenishes segregating and redistributing threshold adjust implant species and channel stop implant species resulting from process temperature cycles. Using lighter boron ions allow for a lesser annealing temperature and thereby avoids the disadvantages of enhanced redistribution and diffusion caused by high temperature anneal.

REFERENCES:
patent: 5147811 (1992-09-01), Sakagami
patent: 5158903 (1992-10-01), Hori et al.
patent: 5218221 (1993-06-01), Okumura
patent: 5308780 (1994-05-01), Chou et al.
patent: 5320974 (1994-06-01), Hori et al.
patent: 5360749 (1994-11-01), Anjum et al.
patent: 5393689 (1995-02-01), Pfiester et al.
patent: 5409848 (1995-04-01), Han et al.
patent: 5413945 (1995-05-01), Chien et al.

Affiliated with

Also associated with

Rating

Large tilt angle boron implant methodology for reducing subthres does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Large tilt angle boron implant methodology for reducing subthres, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Large tilt angle boron implant methodology for reducing subthres will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1387728