Large-surface fast photodetector sensitive in the 0.8-1.1 .mu.m

Details Large-surface fast photodetector sensitive in the 0.8-1.1 .mu.m Large-surface fast photodetector sensitive in the 0.8-1.1 .mu.m

1981-06-09

1983-12-13

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

250226, 357 16, 350 11, H01J 3912

Patent

active

044206844

ABSTRACT:
The photodetector comprises a silicon substrate with high sensitivity, a diffusion layer defining a PN junction, and a CdTe layer, as filter, placed on the face close to the PN junction, for stopping radiations of wave lengths shorter than 0.8 .mu.m. The photodetector is suitable for detecting radiations of AsGa diodes used in optical telecommunication systems.

REFERENCES:
patent: 3218204 (1965-11-01), Ruehrwein
patent: 3261726 (1966-07-01), Ruehrwein
patent: 3364066 (1968-01-01), Karlson et al.
patent: 3996461 (1976-12-01), Sulzbach et al.
patent: 4228349 (1980-10-01), Ettenberg et al.

Affiliated with

Also associated with

Rating

Large-surface fast photodetector sensitive in the 0.8-1.1 .mu.m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Large-surface fast photodetector sensitive in the 0.8-1.1 .mu.m , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Large-surface fast photodetector sensitive in the 0.8-1.1 .mu.m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-805542