Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-06-12
2009-10-27
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
C438S014000, C438S680000, C365S237000, C257SE21023, C257SE21039
Reexamination Certificate
active
07608542
ABSTRACT:
A large-size glass substrate, from which a photomask substrate is formed, is prepared by processing a large-size glass substrate stock by (1) a flattening removal quantity based on height data of the substrate stock in the vertical attitude plus a deformation-corrective removal quantity. The deformation-corrective removal quantity is calculated from (2) a deflection of the substrate stock by its own weight in the horizontal attitude, (3) a deformation of the photomask substrate caused by chucking in an exposure apparatus, and (4) an accuracy distortion of a platen for supporting a mother glass.
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Kusabiraki Daisuke
Shibano Yukio
Ueda Shuhei
Watabe Atsushi
Birch & Stewart Kolasch & Birch, LLP
Dang Phuc T
Shin-Etsu Chemical Co. , Ltd.
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