Large single crystal quaternary alloys of IB-IIIA-SE.sub.2 and m

Details Large single crystal quaternary alloys of IB-IIIA-SE.sub.2 and m Large single crystal quaternary alloys of IB-IIIA-SE.sub.2 and m

1986-07-15

1988-01-26

Rutledge, L. Dewayne

Metal treatment

Stock

148442, 420489, 420497, 420500, 420502, 420555, 420579, 420587, C22C 2800, C22C 900

Patent

active

047215399

ABSTRACT:
New alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2 (where x ranges between 0 and 1 and preferably has a value of about 0.75) and CuIn.sub.y Ga.sub.(1-y) Se.sub.2 (where y ranges between 0 and 1 and preferably has a value of about 0.90) in the form of single crystals with enhanced structure perfection, which crystals are substantially free of fissures are disclosed. Processes are disclosed for preparing the new alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2. The process includes placing stoichiometric quantities of a Cu, Ag, In, and Se reaction mixture or stoichiometric quantities of a Cu, In, Ga, and Se reaction mixture in a refractory crucible in such a manner that the reaction mixture is surrounded by B.sub.2 O.sub.3, placing the thus loaded crucible in a chamber under a high pressure atmosphere of inert gas to confine the volatile Se to the crucible, and heating the reaction mixture to its melting point. The melt can then be cooled slowly to form, by direct solidification, a single crystal with enhanced structure perfection, which crystal is substantially free of fissures.

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