Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1995-11-22
1997-11-18
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330295, 330307, H03F 360, H03F 368, H03F 3195
Patent
active
056892128
ABSTRACT:
Disclosed is a novel topology of monolithic, microwave amplifiers with high integration. This is a more compact topology, divided into a two-level or tree-like structure in which the division of the input signal is done firstly on each transistor Tij and, secondly, on each of the elementary transistors tijk of the transistors Tij. More specifically, the input line LE is divided into different basic lines li, each line li supplying lines lij distributed on either side of said lines li, a line lij then supplying a power transistor Tij. Application to microwave amplifiers.
REFERENCES:
patent: 4270097 (1981-05-01), Le Tron et al.
patent: 4783638 (1988-11-01), Mamodaly et al.
patent: 5194403 (1993-03-01), Delage et al.
patent: 5252841 (1993-10-01), Wen et al.
patent: 5411632 (1995-05-01), Delage et al.
patent: 5469108 (1995-11-01), Tserng
K.B. Lasch and W.N. Schnaitter "26th Electronic Components Conference", Advances in the Design of Microwave Power Transistors, Apr. 26, 1976, San Francisco, CA, USA (pp. 131-139).
Delage Sylvain
Floriot Didier
Obregon Juan
Roux Pascal
"Thomson-CSF"
Mottola Steven
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