Large pitch CCD with high charge transfer efficiency

Details Large pitch CCD with high charge transfer efficiency Large pitch CCD with high charge transfer efficiency

1987-07-06

1989-04-11

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Counting or dividing in incremental steps

Beam type tube

377 58, H01L 2978, G11C 1928

Patent

active

048210811

ABSTRACT:
A CCD structure wherein the patterned well implant and/or patterned barrier implant geometries are modified to exploit two dimensional potential modification effects to induce potential gradation along the length of the CCD pixel. Preferably these geometry modifications are in the form of wedge-shaped extensions of the well doping into the barrier region. The modifications thus induced to the potential profile for electrons in the direction of the charge transfer along the CCD pixel mean that the regions of flat potential, wherein carrier transport is diffusion dominated, are shortened, so that charge transfer efficiency can be improved at reasonably high clock rates.

REFERENCES:
patent: 4229752 (1980-10-01), Hynecek
patent: 4242692 (1980-12-01), Hagiwara

Affiliated with

Also associated with

Rating

Large pitch CCD with high charge transfer efficiency does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Large pitch CCD with high charge transfer efficiency, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Large pitch CCD with high charge transfer efficiency will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-670005