Large grain thin film polycrystalline P-InP/n-Cds solar cell

Details Large grain thin film polycrystalline P-InP/n-Cds solar cell Large grain thin film polycrystalline P-InP/n-Cds solar cell

1977-09-29

1978-08-22

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 16, 357 20, 357 30, 357 59, H01L 3106

Patent

active

041086848

ABSTRACT:
A thin film solar cell having adjacent layers of P and N type polycrystalline semiconductor material which define a PN junction boundary, the improvement comprising a layer of n-type polycrystalline cadmium sulfide disposed on a chosen substrate material and having large grains with lateral grain boundaries on the order of about 20 micrometers or greater and a layer of polycrystalline P-type indium phosphide disposed on said layer of polycrystalline cadmium sulfide and having a thickness on the order of between 1.0 and 4.0 micrometers and further having large replicated grain boundaries with lateral dimensions and spacings approximately the same as the lateral dimensions and spacings of said large grains of cadmium sulfide, whereby the lateral grain dimensions in said cadmium sulfide and indium phosphide layers are maximized while the quantity of indium in said solar cell is minimized.

REFERENCES:
patent: 4039357 (1977-08-01), Bachmann et al.
K. J. Bachmann et al., "Polycrystalline Thin-Film InP/CdS Solar Cell", Appl. Phys. Lett., vol. 29, pp. 121-123, Jul. 1976.
K. J. Bachmann et al., "Preparation of P-Type InP Films on Insulating and Conducting Substrates Via Chemical Vapor Deposition", J. Electrochem. Soc., Oct. 1976, vol. 123, pp. 1509-1513.
I. P. Kaminow et al., "Sputtering of Polycrystalline InP on CdS and Other Substrates", J. Vac. Sci. Technol., vol. 14, p. 1029 (1977).

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