Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-06-05
2007-06-05
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S309000
Reexamination Certificate
active
10767525
ABSTRACT:
A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then depositing silicon nuclei, which will act as nucleation sites, on the amorphous film. After deposition of silicon nuclei, crystallization, and specifically HSG, is prevented by lowering temperature and/or raising pressure. Next a second amorphous silicon layer is deposited over the first layer and the nuclei. Finally an anneal is performed to induce crystallization from the embedded nuclei. Thus grains are formed from the silicon bulk, rather than from the surface, HSG is avoided, and a smooth polysilicon film with enhanced grain size is produced.
REFERENCES:
patent: 5343066 (1994-08-01), Okamoto et al.
patent: 5693959 (1997-12-01), Inoue et al.
patent: 5893747 (1999-04-01), Yang
patent: 6005270 (1999-12-01), Noguchi
patent: 6031263 (2000-02-01), Forbes et al.
patent: 6249020 (2001-06-01), Forbes et al.
patent: 6259126 (2001-07-01), Hsu et al.
patent: 6593624 (2003-07-01), Walker
patent: 6992349 (2006-01-01), Lee et al.
patent: 2001/0032997 (2001-10-01), Forbes et al.
Potter Roy
Sandisk 3D LLC
Vierra Magen Marcus & DeNiro LLP
LandOfFree
Large grain size polysilicon films formed by nuclei-induced... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Large grain size polysilicon films formed by nuclei-induced..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Large grain size polysilicon films formed by nuclei-induced... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3826745