Large cross-sectional area molecular beam source for semiconduct

Details Large cross-sectional area molecular beam source for semiconduct Large cross-sectional area molecular beam source for semiconduct

1986-09-24

1988-09-27

Church, Craig E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250251, H05H 300

Patent

active

047744162

ABSTRACT:
A large cross-section molecular beam source for the controlled delivery of a reactant species to provide deposition or etching over a generally large cross-sectional surface area of a substrate is described. The apparatus includes a source of the reactant species, typically as a gaseous material, a microchannel array for providing a directionalized, low divergence molecular beam of the reactant species having a cross-sectional dimension directly comparable to that of the substrate. The apparatus further includes a substrate mount that maintains the substrate so as to allow the direct impingement of the columnarized molecular beam on the wide area surface of the substrate. The reactant species source, microchannel array and substrate mount are housed within a vacuum chamber adapted to maintain a vacuum sufficient to enable the formation of the directionalized molecular beam of the reactant species upon its passing through the microchannel array.

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