Large capacity major-minor loop bubble domain memory with redund

Details Large capacity major-minor loop bubble domain memory with redund Large capacity major-minor loop bubble domain memory with redund

1976-05-24

1978-02-21

Moffitt, James W.

Static information storage and retrieval

Magnetic bubbles

Disposition of elements

365 1, 365 12, 365 13, 365 15, 365 35, 365 39, G11C 1908

Patent

active

040757080

ABSTRACT:
A large capacity bubble memory device using a basic major-minor loop storage cell design. The basic storage cell is repeated, typically in matrix form, on a suitable bubble domain structure. The cell design is arranged so that interconnecting elements between respective cells permit magnetic bubble domains to be selectively transferred between cells in accordance with the status of switch elements. Control signals control the switch status. The cells include redundancy features so that cells can be interconnected to form a large capacity storage loop whereby chip yield is increased.

REFERENCES:
patent: 3703712 (1972-11-01), Bobeck et al.
patent: 3971005 (1976-07-01), Buhrer
patent: 3991411 (1976-11-01), George
patent: 4015249 (1977-03-01), Hu et al.

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