Large array of upward pointing P-I-N diodes having large and...

Details Large array of upward pointing P-I-N diodes having large and... Large array of upward pointing P-I-N diodes having large and...

2010-11-05

2011-11-15

Le, Vu (Department: 2824)

Static information storage and retrieval

Read only systems

Semiconductive

C365S096000

Reexamination Certificate

active

08059444

ABSTRACT:
A memory is provided that includes a first memory level having a plurality of memory cells. Each memory cell includes a vertically oriented p-i-n diode including a bottom heavily doped p-type region, a middle intrinsic or lightly doped region, and a top heavily doped n-type region. When a voltage between about 1.5 volts and about 3.0 volts is applied across each p-i-n diode, a current of at least 1.5 microamps flows through 99 percent of the p-i-n diodes. Numerous other aspects are also provided.

REFERENCES:
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 5578850 (1996-11-01), Fitch et al.
patent: 5915167 (1999-06-01), Leedy
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6525953 (2003-02-01), Johnson
patent: 6534841 (2003-03-01), Van Brocklin et al.
patent: 6946719 (2005-09-01), Petti et al.
patent: 6952030 (2005-10-01), Herner et al.
patent: 6952043 (2005-10-01), Vyvoda et al.
patent: 7172840 (2007-02-01), Chen
patent: 7176064 (2007-02-01), Herner
patent: 7405465 (2008-07-01), Herner
patent: 7575984 (2009-08-01), Radigan et al.
patent: 7667999 (2010-02-01), Herner et al.
patent: 7682920 (2010-03-01), Herner
patent: 7767499 (2010-08-01), Herner
patent: 2001/0036750 (2001-11-01), Radens et al.
patent: 2005/0052915 (2005-03-01), Herner et al.
patent: 2005/0121742 (2005-06-01), Petti et al.
patent: 2005/0221200 (2005-10-01), Chen
patent: 2005/0226067 (2005-10-01), Herner et al.
patent: 2006/0250837 (2006-11-01), Herner et al.
patent: 2006/0289996 (2006-12-01), Ono et al.
patent: 2007/0072360 (2007-03-01), Kumar et al.
patent: 2007/0132049 (2007-06-01), Stipe
patent: 2008/0111120 (2008-05-01), Lee et al.
patent: 2008/0237599 (2008-10-01), Herner et al.
patent: 2008/0239787 (2008-10-01), Herner
patent: 2009/0316468 (2009-12-01), Herner
patent: WO 2006/039370 (2006-04-01), None
patent: WO 2006/121837 (2006-11-01), None
patent: WO 2006/121924 (2006-11-01), None
Second Office Action of related Chinese Patent Application No. 200880017712.7 issued Dec. 29, 2010.
Apr. 7, 2009 Notice of Allowance of U.S. Appl. No. 11/692,153.
May 1, 2009 Notice of Allowance of U.S. Appl. No. 11/692,153.
Nov. 26, 2008 Office Action of U.S. Appl. No. 11/692,151.
Apr. 16, 2009 Final Office Action of U.S. Appl. No. 11/692,151.
Herner, S.B. et al., “Polysilicon Memory Switching: Electrothermal-Induced Order”, IEEE Transactions on Electron Devices, vol. 53, No. 9, Sep. 9, 2006, pp. 2320-2327.
Herner et al., “Vertical P-I-N Polysilicon Diode with Antifuse for Stackable Field-Programmable ROM”, IEEE Electron Device Letters, IEEE Service Center, New York, NY, vol. 25, No. 5, May 1, 2004 (pp. 271-273).
International Search Report of PCT/US2008/003975 dated Mar. 18, 2009.
Written Opinion of PCT/US2008/003975 dated Mar. 18, 2009.
U.S. Appl. No. 10/326,470, filed Dec. 19, 2002.
Jan. 7, 2009 Reply to Nov. 26, 2008 Office Action of U.S. Appl. No. 11/692,151.
Jun. 16, 2009 Reply to Apr. 16, 2009 Final Office Action of U.S. Appl. No. 11/692,151.
Office Action of U.S. Appl. No. 11/692,151 mailed Sep. 2, 2009.
Dec. 2, 2009 Reply to Sep. 2, 2009 Office Action of U.S. Appl. No. 11/692,151.
Office Action of counterpart European Patent Application No. 08 826 319.9 mailed Jan. 18, 2010.
Notice of Allowance of U.S. Appl. No. 11/692,151 mailed Mar. 29, 2010.
May 28, 2010 Reply to Jan. 18, 2010 Office Action of counterpart European Patent Application No. 08 826 319.9.
Notice of Allowance of U.S. Appl. No. 12/478,481 mailed Jul. 9, 2010.
Supplemental Notice of Allowance of U.S. Appl. No. 12/478,481 mailed Aug. 30, 2010.
Office Action of counterpart Chinese Patent Application No. 200880017712.7 mailed Jul. 27, 2010.
Dec. 11, 2008 Restriction Requirement of U.S. Appl. No. 11/692,153.
Feb. 6, 2009 Reply to Dec. 11, 2008 Restriction Requirement of U.S. Appl. No. 11/692,153.
Herner, U.S. Appl. No. 12/844,037, filed Jul. 27, 2010.
Dec. 13, 2010 Reply to Jul. 27, 2010 Office Action of counterpart Chinese Patent Application No. 200880017712.7.
Mar. 11, 2011 Reply to Second Office Action of related Chinese Patent Application No. 200880017712.7 issued Dec. 29, 2010.

Affiliated with

Also associated with

Rating

Large array of upward pointing P-I-N diodes having large and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Large array of upward pointing P-I-N diodes having large and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Large array of upward pointing P-I-N diodes having large and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4296221