Large area, uniformly low dislocation density GaN substrate...

Details Large area, uniformly low dislocation density GaN substrate... Large area, uniformly low dislocation density GaN substrate...

2011-07-05

2011-07-05

Speer, Timothy M (Department: 1784)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S698000, C428S704000, C117S952000

Reexamination Certificate

active

07972711

ABSTRACT:
Large area single crystal III-V nitride material having an area of at least 2 cm2, having a uniformly low dislocation density not exceeding 3×106dislocations per cm2of growth surface area, and including a plurality of distinct regions having elevated impurity concentration, wherein each distinct region has at least one dimension greater than 50 microns, is disclosed. Such material can be formed on a substrate by a process including (i) a first phase of growing the III-V nitride material on the substrate under pitted growth conditions, e.g., forming pits over at least 50% of the growth surface of the III-V nitride material, wherein the pit density on the growth surface is at least 102pits/cm2of the growth surface, and (ii) a second phase of growing the III-V nitride material under pit-filling conditions.

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Co-pending U.S. Appl. No. 13/008,008 filed Jan. 17, 2011.

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