Large area thin film growing method

Details Large area thin film growing method Large area thin film growing method

1994-07-11

1995-08-01

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437103, 437109, 437233, 437967, 4272551, H01L 21205

Patent

active

054380197

ABSTRACT:
High quality silicon thin films are formed on a substrate in a conventional chemical vapor deposition reactor using silicon hydride source gas, and allowing adsorption of the deposition at low temperature before decomposition at a higher temperature. The silicon source gas comprises a mixture of silane and polysilanes exhibiting different coefficients of adsorption in order to achieve a uniform growth of successive thin films.

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