Large area semiconductor detector with internal gain

Details Large area semiconductor detector with internal gain Large area semiconductor detector with internal gain

2007-09-11

2007-09-11

Lee, John R. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C257S438000, C257S496000, C257SE31063, C438S091000, C438S965000

Reexamination Certificate

active

11238001

ABSTRACT:
A method is provided for forming a semiconductor-detection device that provides internal gain. The method includes forming a plurality of bottom trenches in a bottom surface of an n-doped semiconductor wafer; and forming a second plurality of top trenches in a top surface of the semiconductor wafer. The bottom surface and the top surface are opposed surfaces. Each of the bottom trenches is substantially parallel to and substantially juxtaposed to an associated one of the top trenches. The method further includes doping the semiconductor wafer with at least one p-type dopant to form a p-region that defines at least one n-well within the p-region, wherein a p-n junction is formed substantially at an interface of the n-well and the p-region; and removing a portion of the bottom surface to form a remaining-bottom surface, wherein a portion of the n-well forms a portion of the remaining-bottom surface.

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patent: 5500376 (1996-03-01), Ishaque et al.
patent: 5670383 (1997-09-01), Piccone et al.

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