Large-area, scan-and-repeat, projection patterning system with u

Photocopying – Projection printing and copying cameras – Original moves continuously

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355 53, 355 55, H01L 2130, G03B 2752

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active

057106193

ABSTRACT:
In numerous applications of large-area patterning systems, the preferred image magnification is unity. However, in some applications, the size of the substrate may change slightly due to various thermal and/or chemical processing steps. To compensate for scale changes of the substrate, the magnification of the imaging system must vary slightly from unit magnification (typically by a fraction of a percentage) so that a layer already patterned on the substrate will have, after processing, proper image registration with the subsequent layer.
This disclosure describes a lithography system for exposing large substrates at high imaging resolution and high exposure throughput, and specifically relates to a scan-and-repeat patterning system that employs a unitary mask-substrate stage and enables projection imaging of a substrate with capability to control the image magnification to compensate for changes of substrate dimensions occurring as a result of previous process steps.
A combination of optical and mechanical compensation is used to provide the necessary magnification control, including anamorphic magnification variation in which the fine adjustment is of different magnitudes in x and y dimensions. The optical control is provided by a projection lens with anamorphic magnification adjustment capability. The mechanical compensation is performed by providing a differential relative velocity between the mask and substrate during scanning.

REFERENCES:
patent: 5285236 (1994-02-01), Jain
patent: 5477304 (1995-12-01), Nishi
patent: 5625436 (1997-04-01), Yanagihara et al.

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