Large-area PIN diode with reduced capacitance

Details Large-area PIN diode with reduced capacitance Large-area PIN diode with reduced capacitance

2009-03-26

2011-12-27

Sandvik, Benjamin (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S656000, C257SE31092

Reexamination Certificate

active

08084838

ABSTRACT:
The invention provides a design of PIN diode having a low capacitance and a large area of effective collection of photo-generated charge. The low capacitance is obtained by replacing a continuous collector layer in the diode by a sparse array of collector disks interconnected by narrow metallic runners at a different structural level separated from the collector discs by an interlevel dielectric.

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