Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2011-04-26
2011-04-26
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C257S014000, C257SE21090, C438S049000, C977S742000
Reexamination Certificate
active
07932511
ABSTRACT:
A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
REFERENCES:
patent: 4769683 (1988-09-01), Goronkin et al.
patent: 4817842 (1989-04-01), Wilson
patent: 4996574 (1991-02-01), Shirasaki
patent: 5274602 (1993-12-01), Glenn
patent: 5612255 (1997-03-01), Chapple-Sokol et al.
patent: 5920078 (1999-07-01), Frey
patent: 5962863 (1999-10-01), Russell et al.
patent: 6256767 (2001-07-01), Kuekes et al.
patent: 6274007 (2001-08-01), Smirnov et al.
patent: 6294401 (2001-09-01), Jacobson et al.
patent: 6383923 (2002-05-01), Brown et al.
patent: 6438025 (2002-08-01), Skarupo
patent: 6445006 (2002-09-01), Brandes et al.
patent: 6447663 (2002-09-01), Lee et al.
patent: 6455325 (2002-09-01), Tajima
patent: 6465813 (2002-10-01), Ihm
patent: 6509085 (2003-01-01), Kennedy
patent: 6515339 (2003-02-01), Shin et al.
patent: 6536106 (2003-03-01), Jackson et al.
patent: 6566704 (2003-05-01), Choi et al.
patent: 6586785 (2003-07-01), Flagan et al.
patent: 6672925 (2004-01-01), Talin et al.
patent: 6706566 (2004-03-01), Avouris et al.
patent: 6760245 (2004-07-01), Eaton et al.
patent: 6790425 (2004-09-01), Smalley et al.
patent: 6798000 (2004-09-01), Luyken et al.
patent: 6815218 (2004-11-01), Jacobson et al.
patent: 6831017 (2004-12-01), Li et al.
patent: 6838297 (2005-01-01), Iwasaki et al.
patent: 6872645 (2005-03-01), Duan et al.
patent: 6882051 (2005-04-01), Majumdar et al.
patent: 6890624 (2005-05-01), Kambe et al.
patent: 6900479 (2005-05-01), DeHon et al.
patent: 6903717 (2005-06-01), Takahashi et al.
patent: 6996147 (2006-02-01), Majumdar et al.
patent: 7061010 (2006-06-01), Minakata
patent: 7064372 (2006-06-01), Duan et al.
patent: 7067867 (2006-06-01), Duan et al.
patent: 7105428 (2006-09-01), Pan et al.
patent: 7115916 (2006-10-01), Avouris et al.
patent: 7116209 (2006-10-01), Hermann et al.
patent: 7129554 (2006-10-01), Lieber et al.
patent: 7233041 (2007-06-01), Duan et al.
patent: 7351604 (2008-04-01), Cross et al.
patent: 7358121 (2008-04-01), Chau et al.
patent: 2001/0003148 (2001-06-01), Coffee
patent: 2002/0005876 (2002-01-01), Grimes et al.
patent: 2002/0007869 (2002-01-01), Pui et al.
patent: 2002/0096246 (2002-07-01), Sennet et al.
patent: 2002/0117659 (2002-08-01), Lieber et al.
patent: 2002/0127495 (2002-09-01), Scherer
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2002/0130353 (2002-09-01), Lieber et al.
patent: 2002/0146745 (2002-10-01), Natan et al.
patent: 2002/0153160 (2002-10-01), Hofmann et al.
patent: 2002/0163079 (2002-11-01), Awano
patent: 2002/0173083 (2002-11-01), Avouris et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2003/0012723 (2003-01-01), Clarke
patent: 2003/0042562 (2003-03-01), Giebeler et al.
patent: 2003/0060038 (2003-03-01), Sirringhaus et al.
patent: 2003/0064390 (2003-04-01), Schulein et al.
patent: 2003/0077625 (2003-04-01), Hutchison
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2003/0121764 (2003-07-01), Yang et al.
patent: 2003/0178617 (2003-09-01), Appenzeller et al.
patent: 2003/0186522 (2003-10-01), Duan et al.
patent: 2003/0189202 (2003-10-01), Li et al.
patent: 2003/0215865 (2003-11-01), Mayer et al.
patent: 2003/0234465 (2003-12-01), Chen et al.
patent: 2003/0236760 (2003-12-01), Nugent
patent: 2004/0005258 (2004-01-01), Fonash et al.
patent: 2004/0031975 (2004-02-01), Kern et al.
patent: 2004/0033641 (2004-02-01), Yang et al.
patent: 2004/0036126 (2004-02-01), Chau et al.
patent: 2004/0036128 (2004-02-01), Zhang et al.
patent: 2004/0061422 (2004-04-01), Avouris et al.
patent: 2004/0213307 (2004-10-01), Lieber et al.
patent: 2004/0238887 (2004-12-01), Nihey
patent: 2005/0064618 (2005-03-01), Brown et al.
patent: 2005/0253137 (2005-11-01), Whang et al.
patent: 0103208 (2001-01-01), None
patent: 0217362 (2002-02-01), None
patent: 0248701 (2002-06-01), None
Applied Physical Letters, vol. 77, No. 21, Nov. 20, 2000, R. Stevens et al., “Improved fabrication approach for carbon nanotube probe devices”.
Chung et al., “Silicon nanowire devices” Am. Inst. Phys. (2000) 76(15).
Duan et al., “High performance thin-film transistors using semiconductor nanowires and nanoribbons” Nature (2003) 425:274-278.
Tans et al., “Room-temperature transistor based on a single carbon nanotube” Nature (1998) 393.
Yamada “Analysis of submicron carbon nanotube field-effect transistors” Appl. Phys Letts (2000) 76(5).
Cui, Y. et al. “Doping and electrical transport in silicon nanowires” J. Phys. Chem. (2000) 104(22):5213-5216.
Cui, Y. et al. “Functional nanoscale electronic devices assembled using silicon nanowire building blocks” Science (2001) 291:851-853.
Duan, X. et al. “Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices” Nature (2001) 409:66-69.
Huang, Y. et al. “Gallium nitride nanowire nanodevices” Nano Lett (2002) 2(2):101-104.
Tao, A. et al. “Langmuir-Blodgett silver nanowire monolayers for molecular sensing using surface-enhanced raman spectroscopy” Nanos Lett (2003) 3(9):1229-1233.
Whang, D. et al. “Large-scale hierarchical organization of nanowires for functional nanosystems” JP J Appl. Phys (2004) 43:4465-4470.
Supplemental Search Report issued Jul. 28, 2009 for corresponding European Application 03776200.2.
Altieri, J. et al. “Self-consistent Band Theoretic models of DNA” J. Biol. Phys. (1975) 3:103-110.
Avouris, P. et al. “Carbon Nanotube Transistors and Logic Circuits” Physica B (2002) 323:6-14.
Hiramoto, T. “Nano-scale silicon MOSFET: towards non-traditional and quantum devices” 2001 IEEE Int'l SOI Conf. Proceed. (2001) pp. 8-10.
Huang, Y. et al. “Directed Assembly of One-dimensional Nanostructures Into Functional Networks” Science (2001) 291:630-633.
Li, J. et al. “Highly-Ordered Carbon Nanotube Arrays for Electronics Applications” Appl. Phys. Lett (1999) 75 (3):367-369.
Martel, R. et al. “Carbon Nanotube Field Effect Transistors for Logic Applications” IEEE Technical Digest Int'l Electron Devices Mtg (2001) pp. 159-162.
Wu, X.C. et al., “Synthesis of coaxial nanowires of silicon nitride sheathed with silicon and silicon oxide” Solid State Comm (2000) 115:683-686.
Bock Lawrence
Chen Jian
Duan Xiangfeng
Empedocles Stephen
Goldman Jay L.
Anya Igwe U
Bryant Kiesha R
Filler Andrew L.
Nanosys Inc.
LandOfFree
Large-area nanoenabled macroelectronic substrates and uses... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Large-area nanoenabled macroelectronic substrates and uses..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Large-area nanoenabled macroelectronic substrates and uses... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2719005