Large area low mass IR pixel having tailored cross section

Details Large area low mass IR pixel having tailored cross section Large area low mass IR pixel having tailored cross section

1999-04-01

2000-04-04

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257467, 257536, 257332, 2573384, 25737008, 25737014, H01L 2714, H01L 3100, H01L 31058

Patent

active

060464852

ABSTRACT:
The present invention provides a much more optimum design for an infrared pixel microstructure. The configuration of the microstructure itself is designed to optimum operational characteristics including faster speeds than previously available. These faster speeds are achieved by reducing the thermal mass of the pixel itself, thus directly affecting the pixels associated thermal time constant. Thermal mass is reduced by tailoring the cross section of the pixel structure such that protective layers are substantially reduced in areas where they are not necessary. This results in the desired reduction and overall pixel mass and consequently more optimum pixel performance.

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patent: 5912464 (1999-06-01), Vilain et al.
patent: 5929441 (1999-07-01), Beratan et al.

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