Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1994-12-09
1995-08-15
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250423R, 250291, H01J 37317
Patent
active
054421853
ABSTRACT:
A large area ion implantation apparatus which selects ions having predetermined characteristics for implantation. The ions having predetermined characteristics are selected from a plasma contained within a magnetic bottle and heated by a radio frequency source. The selected ions in one embodiment escape from the magnetic bottle and bombard a substrate located external to the magnetic bottle. In another embodiment the selected ions are retained within the magnetic bottle and bombard a substrate which is also located within the bottle. In yet another embodiment of the apparatus, a positive potential on an electrostatic grid located between the substrate and the plasma prevents ions from bombarding a substrate maintained at a negative potential until the potential on the grid is reduced to approximately zero volts.
REFERENCES:
patent: 3571734 (1971-03-01), Consoli et al.
patent: 4139772 (1979-02-01), Williams
patent: 4587430 (1986-05-01), Adler
patent: 5144196 (1992-09-01), Gegenwart et al.
patent: 5232569 (1993-08-01), Nelson et al.
patent: 5289010 (1994-02-01), Shohet
Berman Jack I.
Beyer James
Northeastern University
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