Large area ion implantation process and apparatus

Details Large area ion implantation process and apparatus Large area ion implantation process and apparatus

1994-12-09

1995-08-15

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250423R, 250291, H01J 37317

Patent

active

054421853

ABSTRACT:
A large area ion implantation apparatus which selects ions having predetermined characteristics for implantation. The ions having predetermined characteristics are selected from a plasma contained within a magnetic bottle and heated by a radio frequency source. The selected ions in one embodiment escape from the magnetic bottle and bombard a substrate located external to the magnetic bottle. In another embodiment the selected ions are retained within the magnetic bottle and bombard a substrate which is also located within the bottle. In yet another embodiment of the apparatus, a positive potential on an electrostatic grid located between the substrate and the plasma prevents ions from bombarding a substrate maintained at a negative potential until the potential on the grid is reduced to approximately zero volts.

REFERENCES:
patent: 3571734 (1971-03-01), Consoli et al.
patent: 4139772 (1979-02-01), Williams
patent: 4587430 (1986-05-01), Adler
patent: 5144196 (1992-09-01), Gegenwart et al.
patent: 5232569 (1993-08-01), Nelson et al.
patent: 5289010 (1994-02-01), Shohet

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