Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1994-04-20
1995-09-12
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504921, 2504923, H01J 3704
Patent
active
054499208
ABSTRACT:
A large area ion implantation apparatus which selects ions having predetermined characteristics for implantation. The ions having predetermined characteristics are selected from a plasma contained within a magnetic bottle and heated by a radio frequency source. The selected ions in one embodiment escape from the magnetic bottle and bombard a substrate located external to the magnetic bottle. In another embodiment the selected ions are retained within the magnetic bottle and bombard a substrate which is also located within the bottle. In yet another embodiment of the apparatus, a positive potential on an electrostatic grid located between the substrate and the plasma prevents ions from bombarding a substrate maintained at a negative potential until the potential on the grid is reduced to approximately zero volts.
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Accept and Appear in March issue of Journal of Electronic Materials, "An Evaluation of Contamination from Plasma Immersion Ion Implantation on Silicon Device Characteristics", by S. Qin, et al., vol. 23, 1994, pp. 1-14.
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Berman Jack I.
Beyer James
Northeastern University
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