Large area electron emission system for application in...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified shape of pn junction

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S728000, C257SE33004, C257SE33005, C257SE33006, C438S020000, C250S427000

Reexamination Certificate

active

07456491

ABSTRACT:
The present invention relates to a various systems for generating and directing electron flow, and related methods, manufacturing techniques and related componentry, such as can be used in lithography, microscopy and other applications. In one embodiment, the present invention involves a system that includes an electron source having a plurality of independently-actuatable emission surfaces each of which is capable of emitting electrons, and an optical column adjacent to the electron source through which the emitted electrons pass. The optical column includes a plurality of actuatable electrodes that are capable of influencing paths taken by the emitted electrons.

REFERENCES:
patent: 3665241 (1972-05-01), Spindt et al.
patent: 4994708 (1991-02-01), Shimizu et al.
patent: 5007058 (1991-04-01), Hayes et al.
patent: 6175122 (2001-01-01), Groves et al.
patent: 6187604 (2001-02-01), Gilton
patent: 6194732 (2001-02-01), Okino
patent: 6333508 (2001-12-01), Katsap et al.
patent: 6426234 (2002-07-01), Gilton
patent: 6529304 (2003-03-01), Kimura et al.
patent: 6614035 (2003-09-01), Hartley
patent: 6815875 (2004-11-01), Kuo et al.
patent: 6844664 (2005-01-01), Komoda et al.
patent: 7075223 (2006-07-01), Ando
patent: 7176609 (2007-02-01), Takeuchi et al.
patent: 7176615 (2007-02-01), Song et al.
B.J. Kampherbeek, et al.,An Experimental Setup to Test the MAPPER Electron Lithography Concept, Microelectronic Engineering 53 (2000), pp. 279-282.
C. David, et al.,Low Energy Electron Proximity Printing Using a Self-Assembled Monolayer Resist, Microelectronic Engineering 30 (1996), pp. 57-60.
S. Pilla, et al.,A Porous Silicon Diode as a Source of Low-Energy Free Electrons at milli-Kelvin Temperatures, Journal of Applied Physics 98, 2005, pp. 1-7.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Large area electron emission system for application in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Large area electron emission system for application in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Large area electron emission system for application in... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4033431

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.