Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1987-10-29
1989-04-25
Nguyen, Nam X.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20419212, 20419232, C23C 1434
Patent
active
048245445
ABSTRACT:
An etching/deposition system comprising a hollow cathode electron source in combination with a magnetron sputter deposition plasma device within a containment chamber, said hollow cathode being disposed to inject electrons into the magnetic field of the magnetron plasma device adjacent to the magnetron cathode surface to which a deposition source is affixed. Said system further includes means for initiating and maintaining a discharge plasma within the hollow cathode and for initiating and maintaining the magnetron plasma. The improvement of the invention comprises a workpiece to be coated, located in said chamber, spaced from said magnetron cathode surface which may be biased to attract particles emitted by said deposition source. A particle collimation filter is interposed between the magnetron cathode surface and said target sample but outside of said plasma region, which prevents any deposition particles from reaching said target sample which are not travelling in a direction substantially perpendicular thereto.
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IBM Technical Publication RC11759, Mar. 1986, entitled "Lift-Off Deposition Techniques Using Sputtering" of Cuomo et al.
Mikalesen Donald J.
Rossnagel Stephen M.
International Business Machines - Corporation
Nguyen Nam X.
Schlemmer, Jr. Roy R.
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