Large-area bulk gallium nitride wafer and method of manufacture

Details Large-area bulk gallium nitride wafer and method of manufacture Large-area bulk gallium nitride wafer and method of manufacture

2009-09-09

2011-11-01

Kunemund, Bob M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S086000, C117S105000, C117S099000

Reexamination Certificate

active

08048225

ABSTRACT:
The present invention includes a high-quality, large-area bulk GaN seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal is of ultra-low defect density, has flat surfaces free of bowing, and is free of foreign substrate material. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.

REFERENCES:
patent: 7078731 (2006-07-01), D'Evelyn et al.
Cantu et al., “Si Doping Effect on Strain Reduction in Compressively Strained AI0.49Ga0.51N Thin Films” 2003, Applied Physics Letter, vol. 83, No. 4, pp. 674-676.
D'Evelyn et al., “Bulk GaN Crystal Growth by the High-Pressure Ammonothermal Method,” Journal of Crystal Growth, 2007, vol. 300, pp. 11-16.
Romanov et al., “Stress Relaxation in Mismatched Layers Due to Threading Dislocation Inclination” 2003, Applied Physics Letter, vol. 83, No. 13, pp. 2569-2571.

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