Fishing – trapping – and vermin destroying
Patent
1991-05-30
1993-06-29
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 35, 437 44, 437 80, H01L 21336, H01L 21425
Patent
active
052234452
ABSTRACT:
An ion implanting method which suppresses defects by changing the shape of the amorphous layer formed by ion injection from that of a conventional device.
After forming a mask pattern on a semiconductor wafer, amorphous layers are then formed with sufficient penetration under the mask material by implanting ions at an implant angle greater than or equal to 20 degrees with a dose amount enough for forming amorphous layers. In this large angle ion implanting method, the edge of each amorphous layer becomes dull and, thereby, no voids are formed in a successive heat treatment.
REFERENCES:
Hori, "1/4Man LATID (Large Tilt Angle Implanted Drain) Technology for 3.3 V Operation", IEDM 1989, pp. 777-780.
Wolf et al., "Silicon processing for the VLSI Era vol. I: Process technology", Lattice Press, 1986, pp. 292-294.
Horiuchi et al., "Three dimensional solid-phase epitaxial regrowth from as implanted Si", J. Appl. Phys., 65(6), Mar. 15, 1989, pp. 2238-2242.
Hori et al. , "A New Sub-micron MOSFET with LATID (Large angle tilt implanted Drain) structure", Proc. 1988 Symp. VLSI Technology, San Diego, pp. 15-16.
Chaudhuri Olik
Matsushita Electric - Industrial Co., Ltd.
Ojan Ourmazd S.
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