Lanthanum complex and process for the preparation of a BLT...

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

Reexamination Certificate

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C427S255391, C427S255394

Reexamination Certificate

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06858251

ABSTRACT:
A lanthanum complex of formula (I) having a low evaporation temperature can be used as a useful precursor for MOCVD of a BLT thin layer on semiconductor devices.wherein A is pentamethyldiethylenetriamine(PMDT) or triethoxytriethyleneamine(TETEA).

REFERENCES:
patent: 6274195 (2001-08-01), Rhee et al.

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