Lanthanide/phosphorus precursor compositions for MOCVD of lantha

Compositions: coating or plastic – Coating or plastic compositions – Heavy metal compound containing

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556 19, 556 21, 556 22, 556 24, 427226, 4272481, 427255, 4272553, C23C 1600, C07F 500

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056980221

ABSTRACT:
A precursor composition useful for vapor deposition formation of lanthanide metal/phosphorus oxide films, comprising a precursor compound selected from the group consisting of: (i) adducts of the formula MA.sub.3 (L).sub.x ; (ii) phosphido complexes of the formulae M(PR.sub.3).sub.3 or M(PR.sub.3).sub.3 L.sub.x ; and (iii) disubstituted phosphate complexes of the formulae A.sub.2 M(O.sub.2 P(OR).sub.2), AM(O.sub.2 P(OR).sub.2).sub.2, and M(O.sub.2 P(OR).sub.2).sub.3, wherein: x is from 1 to 5, A=Cp or .beta.-diketonate, Cp=cyclopentadienyl, methylcyclopentadienyl, or TMS-cyclopentadienyl, R=C.sub.1 -C.sub.8 alkyl, and L=a phosphorus-containing ligand selected from the group consisting of phosphine, phosphine oxide, phosphite, phosphate, and 1,2-bis(dimethoxyphosphoryl)benzene, subject to the provisos that: when x is 2 or greater, each L may be the same as or different from the other L; and when the precursor compound is a .beta.-diketonate compound of formula (i), L is not phosphate or phosphine oxide. The precursor composition may be employed for forming a lanthanide metal/phosphorus oxide film on a substrate, by depositing a lanthanide metal/phosphorus material on the substrate from the lanthanide metal/phosphorus precursor composition in vaporized form, and incorporating oxygen in the lanthanide metal/phosphorus material to form the lanthanide metal/phosphorus oxide film on the substrate.

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