Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state
Reexamination Certificate
2006-08-15
2006-08-15
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
C117S036000, C117S937000, C375S151000, C375S153000, C423S021100
Reexamination Certificate
active
07090724
ABSTRACT:
The contents by weight ratio of lanthanum oxide, gallium oxide, and silicon oxide, which are components, in the longitudinal cross-section and transverse cross-section of the straight part, excluding the shoulder part, of a Langasite single crystal ingot grown by pulling-up Langasite is within a range of ±0.05% with respect to the target amounts at all measured locations, and because of having a superior homogeneity in the content of components over the entire ingot, when used, for example, in a piezoelectric device such as an surface acoustic wave filter, has properties for industrial application that contribute to the stabilization of characteristics as well as reducing the costs.
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Uda Satoshi
Wang Shouqi
Hiteshew Felisa
Mitsubishi Materials Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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