Lamp module and back light device having the same

Details Lamp module and back light device having the same Lamp module and back light device having the same

2005-11-15

2005-11-15

Sember, Thomas M. (Department: 2875)

Illumination

Elongated source light unit or support

Repositionable

C362S225000, C362S373000

Reexamination Certificate

active

06964496

ABSTRACT:
A lamp module and a back light device having the lamp module are provided. The lamp module includes a resilient holder, a lamp tube, and a support unit. The resilient holder has an accommodation portion, such as a cavity, for accommodating one end of the lamp tube. The support unit has a reception portion, such as a groove, for engaging with a plug portion of the resilient holder. The support unit has a ditch in one side and the lamp module further includes a conductive element disposed in the ditch for dissipating heat generated by the lamp tube.

REFERENCES:
patent: RE30367 (1980-08-01), Belokin, Jr.
patent: 4773111 (1988-09-01), Hyner et al.
patent: 4949350 (1990-08-01), Jewell et al.
patent: 5031187 (1991-07-01), Orenstein et al.
patent: 5115442 (1992-05-01), Lee et al.
patent: 5138528 (1992-08-01), Altman et al.
patent: 5193098 (1993-03-01), Welch et al.
patent: 5219785 (1993-06-01), Welch et al.
patent: 5256596 (1993-10-01), Ackley et al.
patent: 5328854 (1994-07-01), Vakhshoori et al.
patent: 5371661 (1994-12-01), Simpson
patent: 5594751 (1997-01-01), Scott
patent: 5764674 (1998-06-01), Hibbs-Brenner et al.
patent: 5893722 (1999-04-01), Hibbs-Brenner et al.
patent: 6044100 (2000-03-01), Hobson et al.
patent: RE36961 (2000-11-01), Nagano
patent: 6169756 (2001-01-01), Chirovsky et al.
patent: 6183107 (2001-02-01), Donato
patent: 809845 (1996-04-01), None
Qian, Y. et al., “Long Wavelength (1.3 μm) Vertical-Cavity Surface-Emitting Lasers With a Wafer-Bonded Mirror and an Oxygen-Implanted Confinement Region,”Appl. Phys. Lett., vol. 71, No. 1, (1997), pp. 25-27.
Ridgway, M. C., et al., “Single-Step Implant Isolation of p+-InP with 5-MeV 0 Ions,”Appl. Phys. Lett., vol. 60, No. 24, (1992), pp. 3010-3012.
Huffaker, D. L. et al., “Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers,”Appl. Phys. Lett., vol. 65, No. 1, (1994), pp. 97-99.
Lee, Y. H. et al., “Top-Surface-Emitting GaAs Four-Quantum-Well Lasers Emitting at 0.85μm”,Electronics Letters, vol. 26, No. 11, (1990), pp. 710-711.
Choquette, K. D., et al., “Low Threshold Voltage Vertical-Cavity Lasers Fabricated by Selective Oxidation,”Electronics Letters, vol. 30, No. 24, (1994), pp. 2043-2044.
Deng, H. and Deppe, D. G., “Oxide-Confined Vertical-Cavity Lser With Additional Etched Void Confinement,”Electronics Letters, vol. 32, No. 10, (1996), pp. 900-901.

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