Lamination through a mask

Details Lamination through a mask Lamination through a mask

2006-12-05

2006-12-05

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Warping of semiconductor substrate

C438S458000, C438S975000, C438S942000, C438S460000, C257SE21215, C257SE21235

Reexamination Certificate

active

07144791

ABSTRACT:
The present invention is a process for transfer of a pattern of material from a donor substrate to a receiver substrate by lamination. The pattern of the transferred material is defined by an aperture in a mask interposed between the donor and receiver during lamination. The technique is compatible with flexible polymer receiver substrates and is useful in fabricating thin film transistors for flexible displays.

REFERENCES:
patent: 3226255 (1965-12-01), Cieniewicz et al.
patent: 4556627 (1985-12-01), Sullivan
patent: 6077634 (2000-06-01), Phillips
patent: 44 40 762 (1996-04-01), None
patent: 2001-135734 (2001-05-01), None
patent: 2001-196589 (2001-07-01), None

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