Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2006-08-24
2010-12-28
Blum, David S (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000, C257SE21088, C257SE21568
Reexamination Certificate
active
07858494
ABSTRACT:
Adhesion of particles due to static buildup during a laminated substrate manufacturing process is constrained, so as to reduce generation of a void or a blister in a lamination step and improve yield. A laminate13is formed by superimposing a first semiconductor substrate11, which is to be an active layer, on a second semiconductor substrate12, which is to be a supporting substrate, via an oxide film11a. Electric resistance of either or both of the first and second semiconductor substrates11and12before superimposition is 0.005-0.2 Ωcm.
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BYU Resistivity and Mobility calculator (http://cleanroom.byu.edu/ResistivityCal.phtml.
Takao Abe, Advanced Electronics I-5, p. 45, 1994, along with a partial English-language translation.
Endo Akihiko
Morimoto Nobuyuki
Nishihata Hideki
Blum David S
Greenblum & Bernstein P.L.C.
Sumco Corporation
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