Laminated substrate fabricated from semiconductor wafers bonded

Details Laminated substrate fabricated from semiconductor wafers bonded Laminated substrate fabricated from semiconductor wafers bonded

1998-02-20

2000-08-01

Booth, Richard

Stock material or miscellaneous articles

Composite

Of silicon containing

428620, 438459, 438455, B32B 904, B32B 1304, H01L 2912

Patent

active

060964332

ABSTRACT:
An insulating layer is selectively grown on the major surface of a first silicon wafer, and is partially etched away so as to be retracted below the major surface; after the retraction of the insulating layer, the first silicon wafer is bonded to a second silicon wafer, and the major surface of the first silicon wafer is strongly adhered to the major surface of the second silicon wafer, so that the first silicon wafer is hardly separated from the second silicon wafer.

REFERENCES:
patent: 5691231 (1997-11-01), Kobayashi et al.
patent: 5863829 (1999-01-01), Nakayoshi et al.
patent: 5869386 (1999-02-01), Hamajima et al.
patent: 5937312 (1999-09-01), Iyer et al.
patent: 5953620 (1999-09-01), Katou et al.
patent: 5985681 (1999-11-01), Hamajima et al.

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