Laminated structure of compound semiconductors

Details Laminated structure of compound semiconductors Laminated structure of compound semiconductors

1988-05-12

1991-04-30

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

Having at least three contiguous layers of semiconductive...

148 334, 437131, 437132, H01L 2120

Patent

active

050115502

ABSTRACT:
A laminated structure of compound semiconductors comprising a IV semiconductor underlying substrate, a first III-V compound semiconductor layer that is formed as an intermediate layer on the IV compound semiconductor underlying substrate, and a second III-V compound semiconductor layer that is formed on the intermediate layer, wherein the thermal expansion coefficients of the IV compound semiconductor underlying substrate, E.sub.ts, the first III-V compound semiconductor layer, E.sub.t1, and the second III-V compound semicondductor layer, E.sub.t2, have the following relationship: E.sub.t1 >E.sub.t2 >E.sub.ts.

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