Laminated structure, method of manufacturing the same and...

Details Laminated structure, method of manufacturing the same and... Laminated structure, method of manufacturing the same and...

2006-08-08

2006-08-08

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

C257S758000, C367S140000

Reexamination Certificate

active

07087970

ABSTRACT:
A laminated structure with less breakage of an insulative layer due to stress and easy interconnection. The laminated structure includes at least a first electrode layer, a dielectric layer and a second electrode layer stacked in this order. The first electrode layer includes a first electrode material disposed such that an end surface thereof is exposed in a first side region of the laminated structure and a second electrode material having an insulating film formed on an end surface in a second side region of the laminated structure. The second electrode layer includes the first electrode material disposed such that an end surface is exposed in the second side region of the laminated structure and the second electrode material having an insulating film formed on an end surface in the first side region of the laminated structure.

REFERENCES:
patent: 5173162 (1992-12-01), Inage et al.
patent: 5548564 (1996-08-01), Smith
patent: 2002/0084872 (2002-07-01), Kawazoe
patent: 5-343440 (1993-12-01), None
patent: 2000-087212 (2000-03-01), None
patent: 2001-102650 (2001-04-01), None
patent: 2002-118305 (2002-04-01), None
patent: 2003-037308 (2003-02-01), None
patent: 2003-037308 (2003-02-01), None

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