Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1994-08-10
1996-01-02
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257 16, 257 21, 257 22, 257 72, 257186, 257191, 257232, 257233, 257292, 257438, 257444, 257446, 257448, 257577, H01L 2714, H01L 3100
Patent
active
054811244
ABSTRACT:
Compatibility of high sensitivity with low remaining images, and low crosstalk can be achieved by a laminated solid-state image pickup device, which includes accumulating portions for accumulating electric signals, reading units for reading the electric signals, connecting members formed in contact with the accumulating portions, and a photoconductive film, and by a method for manufacturing the device. The photoconductive film is made of a non-crystalline semiconductor, and is configured by laminating a carrier multiplication layer, a light absorbing layer, a charge injection inhibiting layer of a second conduction type. Each of the connecting members is made of a semiconductor layer of a first conduction type, intrinsic or having a low impurity density, surrounded by a semiconductor layer of the second conduction type or a conductive material.
REFERENCES:
patent: 5187553 (1993-02-01), Makita
patent: 5204539 (1993-04-01), Tsuji et al.
patent: 5260560 (1993-11-01), Yamanobe et al.
patent: 5281844 (1994-01-01), Funaba
patent: 5324959 (1994-06-01), Nakamura et al.
patent: 5338947 (1994-08-01), Watanabe
patent: 5401952 (1995-03-01), Sugawa
Kozuka Hiraku
Shimizu Hisae
Sugawa Shigetoshi
Canon Kabushiki Kaisha
Ngo Ngan V.
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